Характеристики
IGBT MODULE, DUAL, 600V
Transistor Type IGBT
Transistor Polarity N
Voltage, Vces 600V
Current Ic Continuous a Max 130A
Voltage, Vce Sat Max 2.5V
Case Style SEMITRANS 2
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 600V
Current Ic Continuous b Max 100A
Current Ic av 130A
Current, Icm Pulsed 100A
External Depth 35mm
Fixing Centres 80mm
Fixing Hole Diameter 6.4mm
SMD Marking SEMITRANS 2
Temperature, Current 25 C
Time, Rise 40ns
Transistors, No. of 2
Width, External 90mm
Voltage 600V