MJB44H11G, Биполярный транзистор, NPN, 80 В, 50 МГц, 50 Вт

Характеристики

MJB44H11G, Биполярный транзистор, NPN, 80 В, 50 МГц, 50 Вт The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

• Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
• Fast switching speeds
• Complementary pairs simplifies designs
• ESD rating — 3B > 8000V human body model, C > 400V machine model
• 5V Emitter to base voltage (VEBO)
• 2.5 C/W Thermal resistance, junction to case
• 7.5 C/W Thermal resistance, junction to ambient

Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы