Характеристики
IRFB260NPBF, Транзистор, N-канал 200В 56А [TO-220AB]The IRFB260NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
• Low gate-to-drain charge to reduce switching losses
• Fully characterized capacitance including effective COSS to simplify design
• Fully characterized avalanche voltage and current