Характеристики
IRF2804PBF, Транзистор, N-канал 40В 280А авто[TO-220AB]The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
• Advanced process technology
• Ultra-low ON-resistance
• Fast switching
• Repetitive avalanche allowed up to Tjmax