Характеристики
FQP30N06L, Транзистор, N-канал 60В 32А [TO-220]The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
• Low gate charge
• 100% Avalanche tested
• Low crss (typical 50pF)
• ±20V Gate-source voltage