Характеристики
FQP17P06, Транзистор, MOSFET P-CH 60В 17А [TO-220AB]The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
• Low gate charge
• 100% Avalanche tested
• Improved system reliability in PFC and soft switching topologies
• Switching loss improvements
• Lower conduction loss
• 175 C Maximum junction temperature rating