Характеристики
BFR520.215, Транзистор NPN, 15 В, 9 ГГц, 300 мВт, 70 мА The BFR520 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic package. The device is intended for RF front end wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability