Характеристики
2N7002K-T1-GE3, Транзистор N-CH Si 60V 0.3A 3-Pin [SOT-23]The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage.
• 2R Low ON-resistance
• 2V Low threshold
• 25pF Low input capacitance
• 25ns Fast switching speed
• 2000V ESD Protection
• Halogen-free
• Low offset voltage
• Low-voltage operation
• Easily driven without buffer
• High-speed circuits
• Low error voltage