1925

FDS4435BZ, МОП-транзистор, P Канал, -8.8 А, -30 В, 0.016 Ом

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21,00 руб.

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Склад №110-12 дней21,00руб.19,53руб.18,90руб.18,48руб.17,22руб.16,80руб.16,38руб.15,12руб.
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Склад №55 дней48,51руб.44,73руб.43,68руб.42,63руб.41,37руб.39,90руб.37,80руб.34,02руб.

Характеристики

FDS4435BZ, МОП-транзистор, P Канал, -8.8 А, -30 В, 0.016 Ом The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating — MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

• Extended VGSS range (-25V) for battery applications
• HBM ESD protection level of ±3.8kV typical
• High performance trench technology for extremely low RDS (on)
• High power and current handling capability

Дополнительная информация

Корпус

so8

Структура

p-канал